代理品牌
  • 华芯微特
    屏驱控制MCU
    电机控制MCU
    通用控制MCU
  • 华大电子
    华大安全芯片
    华大电子MCU
  • 恒烁半导体
    恒烁NOR FLASH
    恒烁 MCU
  • 晶存科技
    Rayson LPDDR
    Rayson DDR
    Rayson eMMC
  • 康盈半导体
    Kowin eMMC
    Kowin LPDDR
  • 艾迪科泰
    IDKT加密芯片
  • 纽文微
    ALPU加密芯片
  • 瑞纳捷
    Runjet MCU
    Runjet加密芯片
  • 博雅科技
    博雅NOR FLASH
  • 原相科技
    Pixart CMOS Sensor
  • 补丁科技
    Piecemakers DDR
  • SkyHigh
    Skyhigh NAND
    Skyhigh eMCP
    Skyhigh eMMC
  • Netsol
    Netsol SRAM
    Netsol MRAM
  • 三星半导体
    Samsung DDR
    Samsung LPDDR
    Samsung eMMC
    Samsung UFS
    Samsung uMCP
  • 镁光科技
    Micron DDR
    Micron LPDDR
    Micron  eMMC
    Micron UFS
    Micron NAND
  • 海力士
    SK hynxi DDR
    SK hynix LPDDR
    SK hynix eMMC
    SK hynix UFS
    SK hynix uMCP
  • 南亚科技
    Nanya DDR
    Nanya LPDDR
  • 铠侠半导体
    Kioxia NAND
    Kioxia eMMC
    Kioxia UFS
 
产品详情

三星LPDDR

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产品详情
产品评论(0)



Samsung   LPDDR5X







料号
容量
架构
速率
工作电压
工作温度
封装

K3KL3L30CM-BGCT
64Gb
x64
7500Mbps
1.8/1.05/0.9/0.5V
-25~85°C
496FBGA

K3KL3L30CM-JGCT
64Gb
x64
7500Mbps
1.8/1.05/0.9/0.5V
-25~85°C
441FBGA

K3KL3L30CM-MGCT
64Gb
x32
7500Mbps
1.8/1.05/0.9/0.5V
-25~85°C
315FBGA

K3KL4L40DM-BGCT
96Gb
x64
7500Mbps
1.8/1.05/0.9/0.5V
-25~85°C
496FBGA

K3KL5L50CM-BGCT
128Gb
x64
7500Mbps
1.8/1.05/0.9/0.5V
-25~85°C
496FBGA

K3KL5L50CM-MGCT
128Gb
x32
7500Mbps
1.8/1.05/0.9/0.5V
-25~85°C
315FBGA

K3KL8L80CM-MGCT
32Gb
x32
7500Mbps
1.8/1.05/0.9/0.5V
-25~85°C
315FBGA

SamsungLPDDR5







料号
容量
架构
速率
工作电压
工作温度
封装
生产状态
K3LK2K20BM-BGCN
48Gb
x64
5500Mbps
1.8/1.05/0.9/0.5V
-25~85°C
496FBGA
Sample
Samsung   LPDDR4x







料号
架构
速率
工作电压
工作温度
封装
生产状态

K3UH5H50AM-JGCR
x64
4266Mbps
1.8/1.1/0.6V
-25~85°C
432FBGA
Sample

K3UH7H70AM-JGCR
x64
4266Mbps
1.8/1.1/0.6V
-25~85°C
432FBGA
Sample

K4U6E3S4AA-MGCR
x32
4266Mbps
1.8/1.1/0.6V
-25~85°C
200FBGA
Sample

K4UBE3D4AA-MGCR
x32
4266Mbps
1.8/1.1/0.6V
-25~85°C
200FBGA
Sample

K4UCE3Q4AA-MGCR
x32
4266Mbps
1.8/1.1/0.6V
-25~85°C
200FBGA
Sample

K3UH5H50AM-JGCL
x64
4266Mbps
1.8/1.1/0.6V
-25~85°C
432FBGA
MassProduction

K3UH7H70AM-JGCL
x64
4266Mbps
1.8/1.1/0.6V
-25~85°C
432FBGA
MassProduction

K3UHAHA0AM-AGCL
x64
4266Mbps
1.8/1.1/0.6V
-25~85°C
556FBGA
MassProduction

K4U6E3S4AA-MGCL
x32
4266Mbps
1.8/1.1/0.6V
-25~85°C
200FBGA
MassProduction

K4UBE3D4AA-MGCL
x32
4266Mbps
1.8/1.1/0.6V
-25~85°C
200FBGA
MassProduction

K4UCE3Q4AA-MGCL
x32
4266Mbps
1.8/1.1/0.6V
-25~85°C
200FBGA
MassProduction

K4U8E3S4AD-GFCL
x32
4266Mbps
1.8/1.1/0.6V
-40~95°C
200FBGA
MassProduction

K4U8E3S4AD-GHCL
x32
4266Mbps
1.8/1.1/0.6V
-40~105°C
200FBGA
MassProduction

K4U8E3S4AD-GUCL
x32
4266Mbps
1.8/1.1/0.6V
-40~125°C
200FBGA
MassProduction

K3UH5H50AM-AGCL
x64
4266Mbps
1.8/1.1/0.6V
-25~85°C
556FBGA
批量生产

K3UH6H60BM-AGCL
x64
4266Mbps
1.8/1.1/0.6V
-25~85°C
556FBGA
MassProduction

K3UH7H70AM-AGCL
x64
4266Mbps
1.8/1.1/0.6V
-25~85°C
556FBGA
MassProduction

K4U2E3S4AA-GFCL
x32
4266Mbps
1.8/1.1/0.6V
-40~95°C
200FBGA
MassProduction

K4U2E3S4AA-GHCL
x32
4266Mbps
1.8/1.1/0.6V
-40~105°C
200FBGA
MassProduction

K4U2E3S4AA-GUCL
x32
4266Mbps
1.8/1.1/0.6V
-40~125°C
200FBGA
MassProduction

K4U6E3S4AM-GFCL
x32
4266Mbps
1.8/1.1/0.6V
-40~95°C
200FBGA
MassProduction

K4U6E3S4AM-GHCL
x32
4266Mbps
1.8/1.1/0.6V
-40~105°C
200FBGA
MassProduction

K4U6E3S4AM-GUCL
x32
4266Mbps
1.8/1.1/0.6V
-40~125°C
200FBGA
MassProduction

K4UBE3D4AM-GFCL
x32
4266Mbps
1.8/1.1/0.6V
-40~95°C
200FBGA
MassProduction

K4UBE3D4AM-GHCL
x32
4266Mbps
1.8/1.1/0.6V
-40~105°C
200FBGA
Sample

K4UBE3D4AM-GUCL
x32
4266Mbps
1.8/1.1/0.6V
-40~125°C
200FBGA
MassProduction

K4UHE3D4AA-GFCL
x32
4266Mbps
1.8/1.1/0.6V
-40~95°C
200FBGA
MassProduction

K4UHE3D4AA-GHCL
x32
4266Mbps
1.8/1.1/0.6V
-40~105°C
200FBGA
Sample

K4UHE3D4AA-GUCL
x32
4266Mbps
1.8/1.1/0.6V
-40~125°C
200FBGA
MassProduction

Samsung   LPDDR4







料号
架构
速率
工作电压
工作温度
封装
生产状态

K4F2E3S4HA-TFCL
x32
4266Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4F2E3S4HA-THCL
x32
4266Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4F2E3S4HA-TUCL
x32
4266Mbps
1.8/1.1/1.1V
-40~125°C
200FBGA
MassProduction

K4F6E3S4HM-TFCL
x32
4266Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4F6E3S4HM-THCL
x32
4266Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4F6E3S4HM-TUCL
x32
4266Mbps
1.8/1.1/1.1V
-40~125°C
200FBGA
MassProduction

K4FBE3D4HM-TFCL
x32
4266Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4FBE3D4HM-THCL
x32
4266Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4FBE3D4HM-TUCL
x32
4266Mbps
1.8/1.1/1.1V
-40~125°C
200FBGA
MassProduction

K4FHE3D4HA-TFCL
x32
4266Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4FHE3D4HA-THCL
x32
4266Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4FHE3D4HA-TUCL
x32
4266Mbps
1.8/1.1/1.1V
-40~125°C
200FBGA
MassProduction

K4F6E304HB-MGCJ
x32
3733Mbps
1.8/1.1/1.1V
-25~85°C
200FBGA
MassProduction

K4F6E3S4HM-MGCJ
x32
3733Mbps
1.8/1.1/1.1V
-25~85°C
200FBGA
MassProduction

K4F8E3S4HD-MGCL
x32
4266Mbps
1.8/1.1/1.1V
-25~85°C
200FBGA
MassProduction

K4F8E3S4HD-GFCL
x32
4266Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4F8E3S4HD-GHCL
x32
4266Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4F8E3S4HD-GUCL
x32
4266Mbps
1.8/1.1/1.1V
-40~125°C
200FBGA
MassProduction

K4F2E3S4HA-GFCL
x32
4266Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4F2E3S4HA-GHCL
x32
4266Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4F2E3S4HA-GUCL
x32
4266Mbps
1.8/1.1/1.1V
-40~125°C
200FBGA
MassProduction

K4F2E3S4HM-MFCJ
x32
3733Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4F2E3S4HM-MHCJ
x32
3733Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4F4E3S4HF-GFCJ
x32
3733Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4F4E3S4HF-GHCJ
x32
3733Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4F4E3S4HF-GUCJ
x32
3733Mbps
1.8/1.1/1.1V
-40~125°C
200FBGA
MassProduction

K4F6E3D4HB-MFCJ
x32
3733Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4F6E3D4HB-MHCJ
x32
3733Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4F6E3S4HM-GFCL
x32
4266Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4F6E3S4HM-GHCL
x32
4266Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4F6E3S4HM-GUCL
x32
4266Mbps
1.8/1.1/1.1V
-40~125°C
200FBGA
MassProduction

K4F8E3S4HB-MFCJ
x32
3733Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4F8E3S4HB-MHCJ
x32
3733Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4FBE3D4HM-GFCL
x32
4266Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4FBE3D4HM-GHCL
x32
4266Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4FBE3D4HM-GUCL
x32
4266Mbps
1.8/1.1/1.1V
-40~125°C
200FBGA
MassProduction

K4FHE3D4HA-GFCL
x32
4266Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4FHE3D4HA-GHCL
x32
4266Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

K4FHE3D4HA-GUCL
x32
4266Mbps
1.8/1.1/1.1V
-40~125°C
200FBGA
MassProduction

K4FHE3D4HM-MFCJ
x32
3733Mbps
1.8/1.1/1.1V
-40~95°C
200FBGA
MassProduction

K4FHE3D4HM-MHCJ
x32
3733Mbps
1.8/1.1/1.1V
-40~105°C
200FBGA
MassProduction

Samsung   LPDDR3







料号
容量
架构
速率
工作电压
工作温度
封装
生产状态
K4E6E304EC-EGCG
16Gb
x32
2133Mbps
1.8/1.2/1.2V
-25~85°C
178FBGA
MassProduction
K4E8E324EB-EGCG
8Gb
x32
2133Mbps
1.8/1.2/1.2V
-25~85°C
178FBGA
MassProduction
K4EBE304EC-EGCG
32Gb
x32
2133Mbps
1.8/1.2/1.2V
-25~85°C
178FBGA
MassProduction
K4E6E304ED-EGCG
16Gb
x32
2133Mbps
1.8/1.2/1.2V
-25~85°C
178FBGA
MassProduction
K4E8E324ED-EGCG
8Gb
x32
2133Mbps
1.8/1.2/1.2V
-25~85°C
178FBGA
MassProduction
K4EBE304ED-EGCG
32Gb
x32
2133Mbps
1.8/1.2/1.2V
-25~85°C
178FBGA
MassProduction





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